APTM20HM20FTG parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Microchip

Model:

APTM20HM20FTG

Description:

MOSFET 4N-CH 200V 89A SP4

Stock:

7176

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$24.68

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Parameters

Current at 25 ° C - continuous drain (Id)

89A

Drain source voltage (Vdss)

200V

FET Type

4 N channels(H )

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

112nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

6850pF @ 25V

On resistance (maximum) for different Ids and Vgs

24 mΩ @ 44.5A,10V

Power - maximum

357W

Vgs (th) (maximum) for different Ids

5V @ 2.5mA

packing

bulk

series

working temperature

-40°C ~ 150°C(TJ)

Encapsulation/Housing

SP4

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Base installation

Part status

On sale

DataSheet

APTM20HM20FTG（FET, MOSFET）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory7176,Price reference "real-time change" China/Hongkong。 APTM20HM20FTG package/specs, Download APTM20HM20FTG、Datasheet。